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| IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS(R)2 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G Package Marking PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C I D=100 A, R GS=25 I D=100 A, V DS=80 V, di /dt =100 A/s, T j,max=175 C Value 100 88 400 480 6 20 214 -55 ... 175 55/175/56 mJ kV/s V W C Unit A Rev. 1.05 page 1 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.7 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 100 2 3 0.1 4 1 A V - 10 1 5.0 100 100 6.5 nA m 67 4.7 1.6 134 6.2 S 1) 2) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A. See figure 3 Tjmax=150 C and duty cycle D=0.01 for V gs<-5V 3) 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.05 page 2 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=50 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz - 6920 1050 58 17 27 26 7 9200 1400 87 26 40 39 10 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=100 A, V GS=0 to 10 V - 36 25 40 104 5.3 111 49 37 58 139 148 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=50 V, I F=I S, di F/dt =100 A/s - 1 110 295 100 400 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev. 1.05 page 3 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 250 120 200 100 80 150 P tot [W] I D [A] 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 10 s 0.5 102 100 s 1 ms 10 ms 0.2 10 -1 0.1 0.05 0.02 0.01 single pulse 10 1 Z thJC [K/W] 10-2 10-3 2 DC I D [A] 100 10-1 10 -1 10 0 10 1 10 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.05 page 4 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 8V 10 V 7V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 4.5 V 320 6.5 V 12 5V R DS(on) [m] 240 9 5.5 V I D [A] 6V 160 5.5 V 6 6V 10 V 80 5V 4.5 V 3 0 0 1 2 3 4 5 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 250 160 200 120 150 g fs [S] 80 175 C 25 C I D [A] 100 50 40 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 1.05 page 5 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 4 14 3.5 12 3 10 2.5 8 98 % 180 A 1800 A R DS(on) [m] V GS(th) [V] typ 2 1.5 1 0.5 0 6 4 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 104 Ciss 25 C 175 C 175 C, 98% 102 Coss C [pF] 103 I F [A] 25 C, 98% Crss 101 102 101 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.05 page 6 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 12 10 20 V 50 V 100 100 C 25 C 8 80 V 150 C V GS [V] I AS [A] 6 10 4 2 1 1 10 100 1000 0 0 20 40 60 80 100 120 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 115 V GS Qg 110 V BR(DSS) [V] 105 100 V g s(th) 95 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 90 T j [C] Rev. 1.05 page 7 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G PG-TO220-3: Outline Rev. 1.05 page 8 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G Rev. 1.05 page 9 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G PG-TO-263 (D-Pak) Rev. 1.05 page 10 2006-06-02 IPB06CN10N G IPI06CN10N G IPP06CN10N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.05 page 11 2006-06-02 |
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